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| SPICE MODEL: DP350T05 Lead-free Green DP350T05 PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features * * * * * * NEW PRODUCT Epitaxial Planar Die Construction Complementary NPN Type Available (DN350T05) Ideal for Medium Power Amplification and Switching Lead Free By Design/RoHS Compliant (Note 2) "Green Device" (Note 3) Qualified to AEC-Q101 Standards for High Reliability B TOP VIEW E E D G H K J L M C B C A SOT-23 Dim A B C D E G H J K C Min 0.37 1.20 2.30 0.89 0.45 1.78 2.80 0.013 0.903 0.45 0.085 0 Max 0.51 1.40 2.50 1.03 0.60 2.05 3.00 0.10 1.10 0.61 0.180 8 Mechanical Data * * * * * * * * Case: SOT-23 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020C Terminal Connections: See Diagram Terminals: Finish 3/4 Matte Tin Finish annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking (See Page 2): K3U Ordering & Date Code Information: See Page 2 Weight: 0.008 grams (approximate) L M a B E All Dimensions in mm Maximum Ratings Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage @ TA = 25C unless otherwise specified Symbol VCBO VCEO VEBO IC Pd RqJA Tj, TSTG DP350T05 -350 -350 -5.0 -500 300 417 -55 to +150 Unit V V V mA mW C/W C Characteristic Continuous Collector Current (Note 1) Power Dissipation (Note 1) Thermal Resistance, Junction to Ambient (Note 1) Operating and Storage and Temperature Range Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. No purposefully added lead. 3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. DS30624 Rev. 6 - 2 1 of 3 www.diodes.com DP350T05 a Diodes Incorporated Electrical Characteristics @ TA = 25C unless otherwise specified Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO Min -350 -350 -5.0 3/4 3/4 20 30 30 20 15 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 50 Max 3/4 3/4 3/4 -50 -50 3/4 3/4 200 200 3/4 -0.30 -0.35 -0.50 -1.0 -0.75 -0.85 -0.90 -2.0 7.0 3/4 Unit V V V nA nA Test Condition IC = -100mA, IE = 0 IC = -1.0mA, IB = 0 IE = -10mA, IC = 0 VCB = -200V, IE = 0 VCE = -3.0V, IC = 0 IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -30mA, VCE = -10V IC = -50mA, VCE = -10V IC = -100mA, VCE = -10V IC = -10mA, IB = -1.0mA IC = -20mA, IB = -2.0mA IC = -30mA, IB = -3.0mA IC = -50mA, IB = -5.0mA IC = -10mA, IB = -1.0mA IC = -20mA, IB = -2.0mA IC = -30mA, IB = -3.0mA IC = -100mA, VCE = -10V VCB = -20V, f = 1.0MHz, IE = 0 VCE = -10V, IC = -20mA NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain hFE 3/4 Collector-Emitter Saturation Voltage VCE(SAT) V Base-Emitter Saturation Voltage Base-Emitter On Voltage SMALL SIGNAL CHARACTERISTICS Output Capacitance Transition Frequency Note: VBE(SAT) VBE(ON) Cobo fT V V pF MHz 4. Short duration test pulse used to minimize self-heating effect. Ordering Information Device DP350T05-7 Note: (Note 5) Packaging SOT-23 Shipping 3000/Tape & Reel 5. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information K3U Date Code Key Year Code Month Code Jan 1 Feb 2 March 3 Apr 4 K3U = Product Type Marking Code YM = Date Code Marking Y = Year ex: S = 2005 M = Month ex: 9 = September YM 2005 S May 5 Jun 6 2006 T Jul 7 Aug 8 2007 U Sep 9 2008 V Oct O Nov N 2009 W Dec D DS30624 Rev. 6 - 2 2 of 3 www.diodes.com DP350T05 a Diodes Incorporated 300 350 VCE = -10V NEW PRODUCT PD, POWER DISSIPATION (mW) 250 300 hFE, DC CURRENT GAIN TA = 150C 250 200 150 100 50 0 200 150 TA = 75C TA = 125C 100 TA = 25C TA = -55C 50 0 -1 0 25 50 75 100 125 150 175 200 -10 IC, COLLECTOR CURRENT (mA) Fig. 2, DC Current Gain vs. Collector Current -100 TA, AMBIENT TEMPERATURE (C) Fig. 1, Max Power Dissipation vs Ambient Temperature -1 -1 VCE(SAT), COLLECTOR EMITTER SATURATION VOLTAGE (V) TA = 125C TA = 75C VBE(SAT), BASE EMITTER SATURATION VOLTAGE (V) IC = 10 IB TA = 150C TA = 25C TA = -55C TA = 75C TA = 125C TA = 150C -0.1 TA = -55C TA = 25C IC = 10 IB -0.01 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector-Emitter Saturation Voltage vs Collector Current -0.1 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 -100 IC, COLLECTOR CURRENT (mA) Fig. 4, Base Emitter Saturation Voltage vs Collector Current -1 -0.9 VCE = -10V TA = -55C 70 TA = 25 C 60 TA = 75C -0.8 VBE(ON), BASE EMITTER ON VOLTAGE (V) -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 0 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Fig. 5, Base-Emitter On Voltage vs. Collector Current TA = 125C TA = 150C C, CAPACITANCE (pF) -0.7 TA = 25C 50 40 30 20 10 0 0 1 2 Cobo Cibo 3 4 5 VR, REVERSE VOLTAGE (V) Fig. 6, Capacitance vs. Reverse Voltage DS30624 Rev. 6 - 2 3 of 3 www.diodes.com DP350T05 a Diodes Incorporated |
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